Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors
Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors
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DOI:
10.1088/0957-4484/17/14/011
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发表时间:
2006-07-28
期刊:
影响因子:
3.5
通讯作者:
Mizutani, T.
中科院分区:
文献类型:
--
作者:
Nosho, Y.;Ohno, Y.;Mizutani, T.
We have investigated the relation between the conduction property and the work function of the contact metal in carbon nanotube field-effect transistors (NTFETs). The conduction type and the drain current are dependent on the work function. In contrast to NTFETs with Ti and Pd contact electrodes, which showed p-type conduction behaviour, devices with Mg contact electrodes showed ambipolar characteristics and most of the devices with Ca contact electrodes showed n-type conduction behaviour. This indicates that the barrier height of the metal/nanotube contact is dependent on the work function of the contact metal, which suggests that the Fermi-level pinning is weak at the interface, in contrast to conventional semiconductors such as Si and GaAs. We have also demonstrated nonlinear rectification current-voltage characteristics in a nanotube quasi-pn diode with no impurity doping, in which different contact metals with different work functions are used for the anode and the cathode.