Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors

Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors
复制标题

DOI:
10.1088/0957-4484/17/14/011
复制
发表时间:
2006-07-28
期刊:
影响因子:
3.5
通讯作者:
Mizutani, T.
Mizutani, T.
中科院分区:
材料科学3区
文献类型:
--
作者:
Nosho, Y.;Ohno, Y.;Mizutani, T.

文献摘要

被引文献

相似文献

研究了碳纳米管场效应晶体管(ntfet)中接触金属的传导特性与功函数之间的关系。导通类型和漏极电流取决于功函数。与Ti和Pd接触电极的ntfet表现为p型导电行为相反,Mg接触电极的器件表现为双极性特性,Ca接触电极的器件表现为n型导电行为。这表明金属/纳米管接触的势垒高度取决于接触金属的功函数,这表明与传统半导体(如Si和GaAs)相比,界面处的费米能级钉住很弱。我们还展示了一种无杂质掺杂的纳米管准pn二极管的非线性整流电流-电压特性,其中阳极和阴极使用具有不同功函数的不同接触金属。
We have investigated the relation between the conduction property and the work function of the contact metal in carbon nanotube field-effect transistors (NTFETs). The conduction type and the drain current are dependent on the work function. In contrast to NTFETs with Ti and Pd contact electrodes, which showed p-type conduction behaviour, devices with Mg contact electrodes showed ambipolar characteristics and most of the devices with Ca contact electrodes showed n-type conduction behaviour. This indicates that the barrier height of the metal/nanotube contact is dependent on the work function of the contact metal, which suggests that the Fermi-level pinning is weak at the interface, in contrast to conventional semiconductors such as Si and GaAs. We have also demonstrated nonlinear rectification current-voltage characteristics in a nanotube quasi-pn diode with no impurity doping, in which different contact metals with different work functions are used for the anode and the cathode.