Promotion of crystal growth rate in aqueous solution by direct contact with gas corona discharge
Promotion of crystal growth rate in aqueous solution by direct contact with gas corona discharge
复制标题
通过与气体电晕放电直接接触促进水溶液中的晶体生长速率
DOI:
10.1002/crat.200310184
复制
发表时间:
2004
影响因子:
1.5
通讯作者:
K. Fukui
中科院分区:
文献类型:
--
作者:
K. Maeda;N. Sano;Akira Sonoda;K. Fukui
A new technique to promote crystal growth in aqueous solution using gas plasma is proposed. In this method, short‐lived radical species produced in solution which is contacted with gas corona discharge play a role to increase chemical potential of inorganic solute. In an experimental examination, single crystal of KDP was grown in a supersaturated solution which receives oxygen ions and radicals from adjacent corona discharge in air. KDP crystal has two unique growth faces (100) and (101), and the growth rates of both faces were increased considerably by generating the corona discharge. The both growth rates with and without corona discharge were well converged by one function based on chemical potential supersaturation. This result revealed that the solution in contact with gas corona discharge has a larger capacity of chemical potential than that without the discharge. Short‐lived species induced by gas corona discharge are considered to be anti‐solvents to cause this effect. The crystal growth process proposed here is considered to be an excellent method in terms of low impurity inclusion because such short‐lived species do not remain in the final crystal products and solution. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)