Promotion of crystal growth rate in aqueous solution by direct contact with gas corona discharge

Promotion of crystal growth rate in aqueous solution by direct contact with gas corona discharge
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通过与气体电晕放电直接接触促进水溶液中的晶体生长速率

DOI:
10.1002/crat.200310184
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发表时间:
2004
影响因子:
1.5
通讯作者:
K. Fukui
K. Fukui
中科院分区:
材料科学4区
文献类型:
--
作者:
K. Maeda;N. Sano;Akira Sonoda;K. Fukui

文献摘要

被引文献

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提出了一种利用气体等离子体促进水溶液中晶体生长的新技术。在该方法中,在与气体电晕放电接触的溶液中产生的短寿命自由基物种起到增加无机溶质的化学势的作用。在实验研究中,KDP单晶生长在过饱和溶液中,该溶液接收来自空气中相邻电晕放电的氧离子和自由基。KDP晶体具有两个独特的生长面(100)和(101),电晕放电可显著提高两个生长面的生长速率。基于化学势过饱和度的一个函数能很好地收敛有无电晕放电的生长速率。这一结果表明,与气体电晕放电接触的溶液比没有放电的溶液具有更大的化学势容量。由气体电晕放电诱导的短寿命物质被认为是导致这种效应的反溶剂。本文提出的晶体生长工艺被认为是一种低杂质夹杂物的优秀方法,因为这种短寿命物质不会保留在最终晶体产品和溶液中。(© 2004 WILEY ‐ VCH Verlag GmbH & Co. KGaA,魏因海姆)
A new technique to promote crystal growth in aqueous solution using gas plasma is proposed. In this method, short‐lived radical species produced in solution which is contacted with gas corona discharge play a role to increase chemical potential of inorganic solute. In an experimental examination, single crystal of KDP was grown in a supersaturated solution which receives oxygen ions and radicals from adjacent corona discharge in air. KDP crystal has two unique growth faces (100) and (101), and the growth rates of both faces were increased considerably by generating the corona discharge. The both growth rates with and without corona discharge were well converged by one function based on chemical potential supersaturation. This result revealed that the solution in contact with gas corona discharge has a larger capacity of chemical potential than that without the discharge. Short‐lived species induced by gas corona discharge are considered to be anti‐solvents to cause this effect. The crystal growth process proposed here is considered to be an excellent method in terms of low impurity inclusion because such short‐lived species do not remain in the final crystal products and solution. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)