Systematic Investigation of Anisotropic Magneto-Peltier Effect and Anomalous Ettingshausen Effect in Ni Thin Films
Systematic Investigation of Anisotropic Magneto-Peltier Effect and Anomalous Ettingshausen Effect in Ni Thin Films
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DOI：
10.1103/physrevapplied.11.034022
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发表时间：
2019-03-08
影响因子：
4.6
通讯作者：
Uchida, Ken-ichi
中科院分区：
文献类型：
--
作者：
Das, Raja;Iguchi, Ryo;Uchida, Ken-ichi
用锁相热成像（LIT）方法研究了不同厚度和衬底的U型Ni薄膜的各向异性磁珀耳帖效应（AMPE）和反常艾丁斯豪森效应（AEE）。我们建立了一个程序来提取纯AMPE和AEE的贡献，从其他热电效应分离，铁磁薄膜。LIT图像的磁场角θ（H）依赖性的测量清楚地表明，由Ni膜中的AMPE（AEE）引起的温度调制随cos 2 θ（H）（cos θ（H））图案变化，证实了AMPE（AEE）的对称性。系统的LIT测量与各种基板显示，AMPE诱导的温度调制随基板的热导率的增加而减小，而AEE诱导的温度调制几乎是独立的热导率，这表明进入基板的热损失起着重要的作用，在确定AMPE诱导的温度调制在薄膜中的大小。我们的实验结果再现基于二维有限元方法的数值计算。这些发现为研究薄膜器件中的AMPE和AEE提供了一个平台。
The anisotropic magneto-Peltier effect (AMPE) and the anomalous Ettingshausen effect (AEE) are investigated in U-shaped Ni thin films of differing thickness and substrate by means of the lock-inthermography (LIT) method. We establish a procedure to extract pure AMPE and AEE contributions, separated from other thermoelectric effects, for ferromagnetic thin films. The measurements of the magnetic-field-angle theta(H) dependence of the LIT images clearly show that the temperature modulation induced by the AMPE (AEE) in the Ni films varies with a cos2 theta(H) (cos theta(H)) pattern, confirming the symmetry of the AMPE (AEE). The systematic LIT measurements with various substrates show that the AMPE-induced temperature modulation decreases with the increase in thermal conductivity of the substrates, whereas the AEE-induced temperature modulation is almost independent of the thermal conductivity, indicating that the heat loss into the substrates plays an important role in determining the magnitude of the AMPE-induced temperature modulation in thin films. Our experimental results are reproduced by numerical calculations based on a two-dimensional finite-element method. These findings provide a platform for investigating the AMPE and AEE in thin-film devices.