High quality GaAs-based resonant tunneling diodes for high frequency device applications
High quality GaAs-based resonant tunneling diodes for high frequency device applications
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DOI：
10.1109/cornel.1991.170031
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发表时间：
1991-08
期刊：
影响因子：
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通讯作者：
H. Brugger;U. Meiners;C. Wolk;R. Deufel;J. Schroth;A. Forster;H. Luth
中科院分区：
文献类型：
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作者：
H. Brugger;U. Meiners;C. Wolk;R. Deufel;J. Schroth;A. Forster;H. Luth
研究了AlAs/GaAs/AlAs共振隧穿二极管（RTD）的势垒厚度（L/sub B/）和隔离层长度（L/sub S/）对室温下获得高峰电流密度（J/sub p/）和低谷电流密度（J/sub V/）的电流/电压特性的影响。样品是用分子束外延生长的。随着L/sub B/在3个单层（ML）和6个单层之间的范围内的增加，观察到峰谷电流比（J/sub P//J/sub V/）的急剧增加，对于L/sub B/=6个单层，在300 K（77 K）时达到最大值5（12）。同时，J/sub p/随着势垒的变厚呈指数下降。对于4 ML厚的AlAs阻挡层，在300 K时，在负微分电阻区域中达到Δ J=J/sub p/-J/sub V/=165 kA/cm/sup 2/的最大可用电流密度。当L/sub S/>10 nm时，发射极间隔层长度变化对J/sub p/没有影响。
The influence of the barrier thickness (L/sub B/) and the spacer length (L/sub S/) on the current/voltage behavior of AlAs/GaAs/AlAs resonant tunneling diodes (RTDs) to achieve a high peak current density (J/sub p/) and a low valley current density (J/sub V/) for device applications at room temperature was studied. The samples were grown by molecular beam epitaxy. With increasing L/sub B/ in the range between 3 monolayers (ML) and 6 ML a drastic increase of the peak-to-valley current ratio (J/sub P//J/sub V/) up to a maximum value of 5 (12) at 300 K (77 K) for L/sub B/=6 ML is observed. Simultaneously, J/sub p/ decreases exponentially with thicker barriers. A maximum available current density in the negative-differential-resistance region of Delta J=J/sub p/-J/sub V/=165 kA/cm/sup 2/ at 300 K is achieved for 4 ML thick AlAs barriers. No influence of the emitter spacer length variation on J/sub p/ for L/sub S/>10 nm was found. However, for l/sub S/>