Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates
Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates
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m面GaN“双误切”衬底上蓝色InGaN量子阱的电致发光特性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. Speck
中科院分区：
文献类型：
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作者：
L. Kuritzky;Daniel J. Myers;Joseph Nedy;Kathryn M. Kelchner;S. Nakamura;S. Denbaars;C. Weisbuch;J. Speck
采用金属有机化学气相沉积方法在m平面GaN衬底上生长的InxGa1−xN量子阱（QWs），表面错切- 1°向[0001]方向（“- 1°c错切”）目前具有低铟吸收和宽蓝光谱发光线宽的缺点。与−1°c-错切复合衬底相比，具有a-和c-方向错切成分的新表面“双错切”在同外延中表现出更均匀的阶梯流动生长。与−1°c错切表面生长的量子阱相比，在双错切表面生长的量子阱具有更高的铟吸收率、更窄和更对称的蓝光谱电致发光线形状，以及更高的峰值波长输出功率。
InxGa1−xN quantum wells (QWs) grown by metalorganic chemical vapor deposition on bulk m-plane GaN substrates with surface miscut −1° toward [0001] (“−1° c-miscut”) currently suffer from low indium uptake and broad luminescence linewidth in the blue spectrum. New surface “double miscuts” with miscut components in the combined a- and c-directions exhibit more uniform step flow growth in homoepitaxy than coloaded −1° c-miscut substrates. QWs grown on double miscut surfaces exhibit reproducibly higher indium uptake, narrower and more symmetric electroluminescence lineshapes in the blue spectrum, and higher output power at the peak wavelength than those grown on −1° c-miscut surfaces.