Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor
Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor
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DOI：
10.1063/1.3156030
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发表时间：
2009-06
影响因子：
4
通讯作者：
M. Liao;M. Imura;X. Fang;K. Nakajima;G. C. Chen;Y. Koide
中科院分区：
文献类型：
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作者：
M. Liao;M. Imura;X. Fang;K. Nakajima;G. C. Chen;Y. Koide
采用Al 2 O3为缓冲层，SrTiO 3为晶种层，在单晶金刚石上制备了Pb（Zr0.52，Ti0.48）O3（PZT）铁电薄膜。PZT薄膜具有2 Pr =31 μC/cm ~ 2的面内抑制极化和36 kV/cm的矫顽场。研究了掺硼单晶金刚石外延层金属-铁电-绝缘体-半导体（MFIS）电容器的电学性能。与金属/金刚石肖特基二极管相比，MFIS器件的漏电流大大降低。虽然整体的电容-电压特性表现出陷阱主导的滞后行为，铁电极化引起的电压漂移下表现出正的栅极电压。
The authors report the integration of ferroelectric Pb(Zr0.52,Ti0.48)O3 (PZT) thin film on single crystal diamond by using Al2O3 as a buffer layer and SrTiO3 as a seed layer. The PZT film exhibits a remanent in-plane polarization of 2Pr=31 μC/cm2 and a coercive field of 36 kV/cm. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) capacitor using boron-doped single crystal diamond epilayer are investigated. The leakage current of the MFIS device is found to be greatly reduced as compared to that of the metal/diamond Schottky diode. Although the overall capacitance-voltage characteristic shows a trap dominated hysteresis behavior, the ferroelectric polarization induced voltage shift is demonstrated under positive gate voltage.