T-Type Equivalent Circuit of On-Chip Microstrip Line With Magnetic Film-Type Noise Suppressor
T-Type Equivalent Circuit of On-Chip Microstrip Line With Magnetic Film-Type Noise Suppressor
复制标题
带有磁性薄膜型噪声抑制器的片上微带线的T型等效电路
DOI：
10.1109/tmag.2018.2818119
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发表时间：
2018
影响因子：
2.1
通讯作者：
Andoh Hiroya
中科院分区：
文献类型：
--
作者：
Muroga Sho;Endo Yasushi;Takamatsu Masanari;Andoh Hiroya
本文讨论了带有磁性薄膜的片上传输线的R、L、G和C参数，以发展膜式电磁噪声抑制器的设计准则。采用常规硅工艺制作了微带线，并在微带线上沉积了Co85Zr3Nb12(Co-Zr-Nb)薄膜。噪声抑制的目标频率和通带的目标频率分别被设置为5 GHz和数百MHz范围。由测得的S参数换算出T型等效电路模型。在通带频率范围内，有磁性HLM的MSL的电阻值与没有薄膜的MSL的电阻值几乎相同。根据铁磁共振和焦耳损耗，测量的电阻在5.4GHz目标频率附近的34Ω处成功地达到峰值。此外，由于磁性薄膜的高磁导率和金属边界，有磁性薄膜时的电感和电容分别是无薄膜时的1.3和2.5倍。因此，这些结果证明了该方法对于开发一种标准化的磁膜式噪声抑制器的方法是非常有用的。
This paper discusses R, L, G, and C parameters of an on-chip transmission line with a magnetic film for developing the design rule of a film-type electromagnetic noise suppressor. A microstrip line (MSL) is fabricated using a regular silicon process, and a Co85Zr3Nb12(Co-Zr-Nb) film is deposited on the MSL. The target frequency of the noise suppression and the passband are set to 5 GHz and a several hundred MHz range, respectively. The T-type equivalent circuit model is converted from the measured S-parameter. In the passband frequency range, the resistance value of the MSL with the magnetic hlm is almost the same as that without the film. The measured resistance successfully peaks at 34 Ω around the 5.4 GHz target frequency based on the ferromagnetic resonance and Joule losses. Furthermore, the inductance and the capacitance with the magnetic film are 1.3 and 2.5 times higher, respectively, than without the film because of the high permeability and metallic boundary of the magnetic film. Therefore, these results demonstrate the great usefulness of the approach for developing a standardized design method for a magnetic film-type noise suppressor.