Limitations to n‐type doping in diamond: The phosphorus‐vacancy complex
Limitations to n‐type doping in diamond: The phosphorus‐vacancy complex
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金刚石中 n 型掺杂的局限性：磷空位复合物
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
J. Goss
中科院分区：
文献类型：
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作者：
Robert Jones;J. Lowther;J. Goss
尽管钻石中含有大量的磷，但这种材料通常都是绝缘的。有人认为，这是通过形成磷-空位复合体来实现的，这些复合体是深度接受者，补偿了任何给体。用第一原理聚类法对该复合体进行了分析。在电离状态下，缺陷是抗磁性的，不会引起任何内部光学跃迁，尽管在氮共掺杂材料中可以预期和观察到宽带施主-受主跃迁。
In spite of large concentrations of phosphorus being incorporated into diamond, the material often remains insulating. It is argued that this occurs through the formation of phosphorus‐vacancy complexes which are deep acceptors and compensate any donor. The complex is analyzed using a first‐principles cluster method. In the ionized state, the defect is diamagnetic and cannot give rise to any internal optical transitions although broad band donor–acceptor transitions are expected—and observed—in material codoped with nitrogen.