High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture
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DOI：
10.1109/iedm.2010.5703312
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
R. Pillarisetty;B. Chu-Kung;S. Corcoran;G. Dewey;J. Kavalieros;H. Kennel;R. Kotlyar;V. Le;
中科院分区：
文献类型：
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作者：
R. Pillarisetty;B. Chu-Kung;S. Corcoran;G. Dewey;J. Kavalieros;H. Kennel;R. Kotlyar;V. Le;
在这篇文章中，我们展示了一个Ge p沟道QWFET，其缩放TOXE = 14.5V，在ns =5×1012 cm−2时的迁移率为770 cm 2/V*s（在最先进的Si晶体管沟道中的电荷密度为0.5V）。对于薄TOXE 40 μ m，这代表了任何Ge器件报告的最高空穴迁移率，比最先进的应变硅高4倍。QWFET结构通过引入双轴应变和消除掺杂杂质散射来实现高迁移率。使用Si帽和低Dt晶体管工艺实现了薄TOXE，其具有低氧化物界面Dit。使用磷结层抑制了SiGe缓冲层中的并联导通，首次在Ge QWFET中实现了健康的亚阈值斜率。Ge QWFET实现了比InSb p沟道QWFET高2倍的本征Gmsat [3]。这些结果表明Ge QWFET是非硅CMOS的可行p沟道选择。
In this article we demonstrate a Ge p-channel QWFET with scaled TOXE = 14.5Å and mobility of 770 cm2/V*s at ns =5×1012 cm−2 (charge density in the state-of-the-art Si transistor channel at Vcc = 0.5V). For thin TOXE < 40 Å, this represents the highest hole mobility reported for any Ge device and is 4× higher than state-of-the-art strained silicon. The QWFET architecture achieves high mobility by incorporating biaxial strain and eliminating dopant impurity scattering. The thin TOXE was achieved using a Si cap and a low Dt transistor process, which has a low oxide interface Dit. Parallel conduction in the SiGe buffer was suppressed using a phosphorus junction layer, allowing healthy subthreshold slope in Ge QWFET for the first time. The Ge QWFET achieves an intrinsic Gmsat which is 2× higher than the InSb p-channel QWFET [3]. These results suggest the Ge QWFET is a viable p-channel option for non-silicon CMOS.