Efficient thermal spin injection using CoFeAl nanowire

Efficient thermal spin injection using CoFeAl nanowire
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DOI:
10.1038/am.2014.74
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发表时间:
2014-09-01
期刊:
影响因子:
9.7
通讯作者:
Kimura, Takashi
Kimura, Takashi
中科院分区:
材料科学2区
文献类型:
--
作者:
Hu, Shaojie;Itoh, Hiroyoshi;Kimura, Takashi

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基于电子自旋的纳米电子器件可以克服目前半导体技术的物理局限性,因为它们在利用电子的自旋自由度的同时具有低功耗。虽然提高自旋电流的产生效率是自旋电子学实用化的首要问题,但与传统互补金属氧化物半导体技术的无缝器件集成是发展自旋纳米电子学的又一个重要里程碑。特别是,与单个互补金属氧化物半导体电路电连接的纳米磁性多层结构的制备大大复杂化了纳米电子器件的制造过程。热自旋注入是最近发现的自旋流的独特特性,它可能是一种无需电力即可简化器件集成的创新方法,即无线自旋电子学。然而,由于热旋射法的发电效率极低,其可行性很差。在这里,我们证明了具有良好能带结构的高度自旋极化的铁磁性CoFeAl电极具有良好的热旋注入性能。与自旋相关的Seebeck系数约为70µVK-1,这有利于从热中高效地产生自旋流。在室温下,这种热产生的自旋电压大约是传统铁磁注入器的100倍。这一创新的演示可能为自旋装置的集成及其应用开辟一条新的途径。
Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 mu VK-1, which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.