High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Mono layer MoS2 Transistors
High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Mono layer MoS2 Transistors
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DOI：
10.1021/nn5015215
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发表时间：
2014-05-01
期刊：
影响因子：
17.1
通讯作者：
Zhou, Chongwu
中科院分区：
文献类型：
--
作者：
Liu, Bilu;Chen, Liang;Zhou, Chongwu
痕量化学检测对于广泛的实际应用是重要的。最近出现的二维（2D）晶体由于其非常高的表面与体原子比和半导体性质而提供作为具有高灵敏度的电位传感材料的独特优势。在这里，我们报告的第一次使用肖特基接触化学气相沉积生长的单层二硫化钼作为高性能的室温化学传感器。肖特基接触的MoS 2晶体管在暴露于非常低浓度的NO2和NH3时显示出2-3个数量级的电流变化。具体而言，MoS 2传感器显示出清晰的NO2和NH3检测，分别低至20 ppb和1 ppm。我们将所观察到的高灵敏度归因于众所周知的电荷转移机制，更重要的是，肖特基势垒调制分析物分子吸附后，后者是可能的肖特基接触的晶体管和以前没有报道的MoS 2传感器。这项研究显示了20种半导体作为高性能传感器的潜力，也有利于化学物种和单层2D半导体之间的界面现象和相互作用的基础研究。
Trace chemical detection is important for a wide range of practical applications. Recently emerged two-dimensional (2D) crystals offer unique advantages as potential sensing materials with high sensitivity, owing to their very high surface-to-bulk atom ratios and semiconducting properties. Here, we report the first use of Schottky-contacted chemical vapor deposition grown monolayer MoS2 as high-performance room temperature chemical sensors. The Schottky-contacted MoS2 transistors show current changes by 2-3 orders of magnitude upon exposure to very low concentrations of NO2 and NH3. Specifically, the MoS2 sensors show clear detection of NO2 and NH3 down to 20 ppb and 1 ppm, respectively. We attribute the observed high sensitivity to both well-known charger transfer mechanism and, more importantly, the Schottky barrier modulation upon analyte molecule adsorption, the latter of which is made possible by the Schottky contacts in the transistors and is not reported previously for MoS2 sensors. This study shows the potential of 20 semiconductors as high-performance sensors and also benefits the fundamental studies of interfacial phenomena and interactions between chemical species and monolayer 2D semiconductors.