Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
复制标题
热应力对 InGaAsN/GaAs 量子点相互扩散的影响
DOI：
10.1063/1.1760886
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发表时间：
2004
影响因子：
4
通讯作者：
C. Jagadish
中科院分区：
文献类型：
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作者：
Q. Gao;H. Tan;L. Fu;C. Jagadish
采用快速热退火结合沉积二氧化钛（TiO 2）层的方法研究了InGaAsN/GaAs量子点中热应力控制的互扩散。在没有TiO 2覆盖层的情况下，由于热互扩散，在850 °C下退火30 s后，观察到带隙在77 K下从1.033到1.180 eV的蓝移。 通过在样品上沉积TiO 2层，有效地抑制了热互扩散，而不降低光致发光性能。通过退火温度和TiO 2厚度的组合，已经实现了带隙的受控蓝移。我们认为，抑制热互扩散的机制是在退火过程中由TiO 2层产生的QD结构上施加的热应力。
Thermal-stress controlled interdiffusion in InGaAsN/GaAs quantum dots (QDs) has been studied by deposition of titanium oxide (TiO2) layers combined with rapid thermal annealing. Without TiO2 cap layers, blueshifting of the band gap from 1.033 to 1.180 eV at 77 K has been observed after annealing at 850 °C for 30 s due to the thermal interdiffusion. The thermal interdiffusion has been effectively suppressed by depositing TiO2 layers on the samples without degrading the photoluminescence properties. By a combination of annealing temperature and TiO2 thickness, controlled blueshifting of the band gap has been achieved. We suggest that the mechanism of suppression of thermal interdiffusion is the thermal stress imposed on the QD structure generated by TiO2 layers during annealing.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y