QUANTUM YIELD OF GaAs SEMITRANSPARENT PHOTOCATHODE
QUANTUM YIELD OF GaAs SEMITRANSPARENT PHOTOCATHODE
复制标题
DOI：
10.1063/1.1653309
复制
发表时间：
1970-07
影响因子：
4
通讯作者：
Yaocheng Liu;J. Moll;W. Spicer
中科院分区：
文献类型：
--
作者：
Yaocheng Liu;J. Moll;W. Spicer
从连续性方程和光在薄膜和衬底内的多次反射推导出工作在透射模式下的半导体薄膜光电阴极的量子产率。当hv<1.7 eV时，实验与理论拟合较好。实验与理论之间的差异是根据薄膜内缺陷态的不均匀分布来解释的。发现1×1019掺杂锌2.5 μ厚薄膜的电子扩散长度为0.3μ， 3×1019掺杂锌0.85 μ厚薄膜的电子扩散长度为0.1μ。
The quantum yield of a semiconductor thin‐film photocathode, operating in the transmission mode, has been derived from the continuity equation and light multiple reflections within the film and the substrate. The fit between experiment and theory is good for hv<1.7 eV. The differences between experiment and theory are explained in terms of the nonuniform population of defect states within the film. Electron diffusion lengths are found to be 0.3μ for the 1×1019 Zn‐doped 2.5‐μ ‐thick film and 0.1μ for the 3×1019 Zn‐doped 0.85‐μ ‐thick film, respectively.