An experimental study on estimating dynamic junction temperature of SiC MOSFET
An experimental study on estimating dynamic junction temperature of SiC MOSFET
复制标题
SiC MOSFET动态结温估算的实验研究
DOI：
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发表时间：
2018
影响因子：
0.8
通讯作者：
T. Funaki
中科院分区：
文献类型：
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作者：
Shuhei Fukunaga;T. Funaki
为了充分发挥功率半导体器件的优势，功率模块的热特性和建模是不可避免的。功率模块的动态热模型是电力电子系统设计中关注的问题，它与封装结构和材料性能密切相关。暂态热阻测量标准称为静态测试法(JESD51-14[1])，它利用功率半导体器件I-−-V特性的温度依赖性来估计结温。SiCMOSFET的动态栅极阈值电压漂移违反了结温估计。本文在改进静态测试方法的基础上，提出了精确的SiCMOSFET暂态结温度估计方法，并用嵌入在SiCMOSFET中的温敏二极管对温度估计进行了验证。该方法能够准确地获得SiCMOSFET的TJ时间响应，从而实现了对具有SiCMOSFET的功率模块的动态热建模。
Thermal characterization and modeling of power module is inevitable to take full advantages of power semiconductor device. Dynamic thermal modeling of power module, which is related to packaging structure and material property, is attracted attention for power electronics system design. The transient thermal resistance measurement standard, called static test method (JESD51-14 [1]), utilizes temperature dependency in I − V characteristics of power semiconductor device to estimate junction temperature. The dynamic gate threshold voltage shift of SiC MOSFET violates junction temperature estimation. This paper proposes accurate transient junction temperature estimation procedure for SiC MOSFET with advancing the static test method, and validates the temperature estimation with temperature sense diode embedded in SiC MOSFET. The proposed procedure enables to get accurate time response of TJ for SiC MOSFET, which enables dynamic thermal modeling of power module with SiC MOSFET.
DOI：
10.1109/tdmr.2013.2292547
发表时间：
2014-03-01
影响因子：
2
作者：
Chen, Huifeng;Ji, Bing;Cao, Wenping
通讯作者：
Cao, Wenping