“Universal” Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices
“Universal” Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices
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雪崩击穿对能带结构的“普遍”依赖性：为高功率器件选择材料
DOI：
10.1143/jjap.36.1529
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发表时间：
1997
影响因子：
1.5
通讯作者：
J. Allam
中科院分区：
文献类型：
--
作者：
J. Allam
提出了半导体结击穿电压Vb与能带结构之间的一种新的简单唯象关系。对于窄能隙半导体，Vb与先前报道的最小能隙(Eg)成比例。然而，对于包括GaAs、InP等在内的宽禁带材料，Vb与布里渊区平均能隙成线性关系。的值是由25个四面体半导体的精确准粒子能带结构确定的。我们讨论了这种关系的起源以及电离几率和电子-声子散射率的作用。该关系式可用于预测半导体和半导体合金的击穿电压。
A new simple phenomenological relation between the breakdown voltage V b and the bandstructure in semiconductor junctions is presented. For narrow-gap semiconductors, V b scales with the minimum energy gap (E g) as has been previously reported. However, for wide-gap materials including GaAs, InP, etc., V b is linearly dependent on , a Brillouin-zone-averaged energy gap. Values of are determined from accurate quasi-particle bandstructures for 25 tetrahedral semiconductors. We discuss the origin of this relation and the role of the ionisation probability and electron-phonon scattering rate. The relation can be used to predict the breakdown voltage in semiconductors and semiconductor alloys.