Probing valence states with photoemission and inverse photoemission
Probing valence states with photoemission and inverse photoemission
复制标题
用光电发射和反光电发射探测价态
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
T. Fauster
中科院分区：
文献类型：
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作者：
F. Himpsel;T. Fauster
光发射和逆光发射（或韧致辐射光谱）分别被证明是探测占据电子态和未占据电子态的互补技术。如果使用10-40 eV范围内的低电子（光子）能量，则可以测量离域价态的动量以及它们的能量。因此，获得了其他技术无法确定的体态、表面态和吸附态的能带色散。本文用铁磁体和硅化物的体态、硅表面的断键态和未占据的分子吸附轨道的结果，给出了逆光发射的现状报告。
Photoemission and inverse photoemission (or bremsstrahlung spectroscopy) are shown to be complementary techniques for probing occupied and unoccupied electronic states, respectively. The momentum of delocalized valence states can be measured as well as their energy if low electron (photon) energies in the 10–40 eV range are used. Thus, energy band dispersions are obtained for bulk, surface, and adsorbate states which cannot be determined by other techniques. A status report of inverse photoemission is given and illustrated by results for bulk states in ferromagnets and silicides, for broken bond states on silicon surfaces, and for unoccupied molecular adsorbate orbitals.