Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna
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DOI：
10.1016/j.sse.2021.108082
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发表时间：
2021-06-04
影响因子：
1.7
通讯作者：
Mitrovic, I. Z.
中科院分区：
文献类型：
--
作者：
Almalki, S.;Tekin, S. B.;Mitrovic, I. Z.
太赫兹天线与超快金属-绝缘体-金属（MIM）二极管之间的阻抗匹配是实现用于捕获红外（IR）能谱的整流天线技术的关键问题。在本文中，氧化钪（Sc2 O3）为基础的MIM二极管的制作使用磁控溅射和他们的整流性能相比，最先进的Au/Al 2 O3/Au二极管。与Au/Al 2 O3/Au二极管相比，Al/Sc2 O3/Al二极管的零偏动态电阻（RD 0 = 956 k ohm）和零偏响应度（β 0 = 1 A/W）都降低了约两个数量级。结果表明氧化钪在MIM整流器中用于IR整流天线的适用性。
Impedance matching between the terahertz antenna and ultra-fast Metal-Insulator-Metal (MIM) diode is a crucial issue in realizing rectenna technology for harvesting infrared (IR) energy spectrum. In this paper, scandium oxide (Sc2O3)-based MIM diodes were fabricated using magnetron sputtering and their rectification performance compared to state-of-the-art Au/Al2O3/Au diodes. The fabricated Al/Sc2O3/Al diode has exhibited around two orders of magnitude lower zero-bias dynamic resistance (RD0 = 956 k ohm) and high zero-bias responsivity (beta 0 = 1 A/W) in advance to Au/Al2O3/Au diode. The results point to applicability of scandium oxide in MIM rectifiers for IR rectenna.