Carrier capture and escape in In x Ga 1 − x A s / G a A s quantum dots: Effects of intermixing
Carrier capture and escape in In x Ga 1 − x A s / G a A s quantum dots: Effects of intermixing
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DOI:
10.1103/physrevb.59.4630
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发表时间:
1999-02
影响因子:
3.7
通讯作者:
S. Marcinkevičius;R. Leon
中科院分区:
文献类型:
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作者:
S. Marcinkevičius;R. Leon