Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
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DOI：
10.1007/s10825-021-01827-z
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发表时间：
2022-05-25
影响因子：
2.1
通讯作者：
Barnes, Piers R. F.
中科院分区：
文献类型：
--
作者：
Calado, Philip;Gelmetti, Ilario;Barnes, Piers R. F.
最近出现的卤化铅钙钛矿作为薄膜半导体器件的有源层材料，包括太阳能电池、发光二极管和忆阻器，促使了几种新的漂移-扩散模型的发展，其中包括电子和可移动离子电荷载流子的影响。在这项工作中，我们介绍了一种通用的模拟工具，用于模拟具有离子-电子混合导电层的一维有序半导体器件。漂移融合使用户能够使用多达四种电荷载流子物种：电子和空穴加上多达两种离子物种来模拟具有多个不同材料层的设备。将含时载流子连续性方程耦合到泊松方程，实现了对暂态光电子器件测量协议的模拟。除了材料和器件范围的属性外，用户还可以直接访问以适应载体传输、生成和重组的物理模型。此外，离散的层间界面方法避开了对材料界面的边界条件的要求，并能够引入特定于界面的特性。
The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effects of both electronic and mobile ionic charge carriers. In this work we introduce Driftfusion, a versatile simulation tool built for modelling one-dimensional ordered semiconductor devices with mixed ionic-electronic conducting layers. Driftfusion enables users to model devices with multiple, distinct, material layers using up to four charge carrier species: electrons and holes plus up to two ionic species. The time-dependent carrier continuity equations are coupled to Poisson's equation enabling transient optoelectronic device measurement protocols to be simulated. In addition to material and device-wide properties, users have direct access to adapt the physical models for carrier transport, generation and recombination. Furthermore, a discrete interlayer interface approach circumvents the requirement for boundary conditions at material interfaces and enables interface-specific properties to be introduced.