3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
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DOI：
10.1016/s0022-0248(01)02233-3
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发表时间：
2002-04-01
影响因子：
1.8
通讯作者：
Kawahara, T
中科院分区：
文献类型：
--
作者：
Nagasawa, H;Yagi, K;Kawahara, T
开发了一种消除硅衬底上 3C-SiC 异质外延层平面缺陷的新技术。在生长 3C-SiC 之前，在 Si(0 0 1) 衬底（波状硅）的整个表面上形成了沿 [1 1 0] 和 [(1) over bar (1) over bar 0] 方向定向的反向斜面。在3C-SiC生长的初始阶段，在衬底的表面斜坡上发生阶梯流外延，减少了反相边界。连续的孪生边界 (TB) 沿 (1 1 1) 或 ((1) 位于条形图 (1) 位于条形图 1 上) 平面平行排列。通过将反向 TB 与 3C-SiC 生长相结合，消除了孪晶边界。最后，在“波状硅”上生长的200微米厚的3C-SiC表面没有观察到平面缺陷。 (C) 2002 Elsevier Science B.V. 保留所有权利。
A novel technique to eliminate planar defects in the 3C-SiC hetero-epitaxial layer on Si substrate was developed. Before growing 3C-SiC, countered slopes oriented in the [1 1 0] and [(1) over bar (1) over bar 0] directions were formed over the entire surface of Si(0 0 1) substrate (undulant-Si). In the initial stage of 3C-SiC growth, step flow epitaxy occurred on the surface slopes of the substrate, reducing the anti-phase boundaries. Continuous, twin boundaries (TBs) were arranged in parallel along the (1 1 1) or ((1) over bar (1) over bar 1) planes. The twin boundaries were eliminated through combination of the countered TBs with 3C-SiC growth. Finally, no planar defects were observed on the surface of 200-mum thick 3C-SiC grown on "Undulant-Si". (C) 2002 Elsevier Science B.V. All rights reserved.