In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
复制标题
低温分子束外延GaAs衬底上In0.5Ga0.5As/InAlAs调制掺杂场效应晶体管
DOI：
10.1143/jjap.30.3850
复制
发表时间：
1991
影响因子：
1.5
通讯作者：
Kaoru Inoue Kaoru Inoue
中科院分区：
文献类型：
--
作者：
H. Masato;Toshinobu Matsuno Toshinobu Matsuno;Kaoru Inoue Kaoru Inoue
我们报告了 GaAs 衬底上 In0.5Ga0.5As/InAlAs 调制掺杂异质结构的晶格失配生长和电学特性，该异质结构使用宽间隙 InAlAs 渐变缓冲层进行分子束外延，并在约 350°C 进行低温分子束外延生长。实现了残余载流子积累的大幅减少，在电子浓度为3×1012/cm2的情况下，在室温下获得了11100 cm2/V·s的高电子迁移率。研究发现，残余载流子积累的原因与梯度缓冲层生长后的生长中断或温度升高有关。所制造的调制掺杂场效应晶体管表现出低输出电导、良好的夹断特性并且无扭结效应。还获得了 270 mS/mm 的较高跨导。
We report on the lattice-mismatched growth and electrical properties of In0.5Ga0.5As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350°C. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm2/V·s was obtained with an electron concentration of 3×1012/cm2. It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained.