Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.
Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.
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(Ga,Mn)As 磁致伸缩和磁各向异性的纳米力学测量。
DOI：
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发表时间：
2005
影响因子：
8.6
通讯作者：
M. Roukes
中科院分区：
文献类型：
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作者：
S. Masmanidis;H. Tang;E. Myers;Mo Li;K. De Greve;G. Vermeulen;W. Van Roy;M. Roukes
利用GaMnAs纳米机电谐振器首次测量了稀磁半导体的磁致伸缩。共振频率的变化引起的磁场依赖性磁弹性应力被用来同时映射的磁致伸缩和磁各向异性常数在很宽的温度范围内。由于载流子在控制这种材料中的铁磁相互作用中的核心作用，结果似乎提供了对由空穴介导的独特形式的磁弹性行为的洞察。
A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.