Real time observation of phase formations by XRD during Ga‐rich or In‐rich Cu(In, Ga)Se2 growth by co‐evaporation
Real time observation of phase formations by XRD during Ga‐rich or In‐rich Cu(In, Ga)Se2 growth by co‐evaporation
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通过 XRD 实时观察 Gaârich 或 Inârich Cu(In, Ga)Se2 共蒸发生长过程中的相形成
DOI：
10.1002/pssa.201431949
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
R. Scheer
中科院分区：
文献类型：
--
作者：
P. Pistor;S. Zahedi-Azad;S. Hartnauer;L.A. Wägele;E. Jarzembowski;R. Scheer
具有Cu（In，Ga）Se 2吸收剂的太阳能电池依赖于具有贫Cu/富Cu/贫Cu吸收剂沉积条件的三阶段共蒸发工艺以获得最高效率的器件。在这三个阶段的过程中，不同硒化物相的形成和演变以及整个过程中不断变化的成分至关重要地决定了最终的吸收剂质量。在这篇文章中，我们用X射线衍射（XRD）线检测器装置在蒸发装置中实现了真实的实时监测晶相的演变。使用常见的三阶段工艺，我们制备并比较了涵盖从CuInSe 2到CuGaSe 2的全部合金化范围的样品。原位XRD可以检测工艺过程中所有时间存在的晶相，并通过更仔细地观察峰位移和半峰全宽对相演变进行高级分析。对于Ga/（Ga + In）比（GGI）< 0.5的样品，观察到明显的相变，并与所报道的空位化合物Cu（In，Ga）_5Se_8和Cu（In，Ga）_3Se_5的转变有关。对于GGI > 0.5的样品，没有发现这样的指示。对于GGI为0.55的富Ga Cu（In，Ga）Se 2相，XRD分析证明在达到化学计量点之前富Ga相偏析。上述研究结果进行了讨论，鉴于其影响宽禁带太阳能电池的性能。
Solar cells with Cu(In, Ga)Se2absorbers rely on the three‐stage co‐evaporation process with Cu‐poor/Cu‐rich/Cu‐poor absorber deposition conditions for highest efficiency devices. During the three‐stage process, the formation and evolution of different selenide phases with changing compositions throughout the process crucially determine the final absorber quality. In this contribution, we monitor the evolution of crystalline phases in real‐time with an X‐ray diffraction (XRD) line detector setup implemented into an evaporation setup. Using the common three‐stage process, we prepare and compare samples covering the full alloying range from CuInSe2to CuGaSe2. Thein situXRD allows the detection of the crystalline phases present at all times of the process as well as an advanced analysis of the phase evolution through a closer look at peak shifts and the full width at half maximum. For samples with a Ga/(Ga + In) ratio (GGI) < 0.5, distinct phase transitions associated with the transition to the reported vacancy compounds Cu(In,Ga)5Se8and Cu(In, Ga)3Se5are observed. No such indication was found for samples with a GGI > 0.5. For Ga‐rich Cu(In, Ga)Se2phases with a GGI of 0.55, the XRD analysis evidenced a Ga‐rich phase segregation before the stoichiometric point was reached. The above findings are discussed in view of their implication on wide gap solar cell performances.
影响因子：
27.8
作者：
Rodriguez-Alvarez, Humberto;Weber, Alfons;Mainz, Roland
通讯作者：
Mainz, Roland