Phase diagrams of Bi 1-x Sb x thin films with different growth orientations
Phase diagrams of Bi 1-x Sb x thin films with different growth orientations
复制标题
不同生长方向的Bi 1-x Sb x 薄膜的相图
DOI：
--
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
M. Dresselhaus
中科院分区：
文献类型：
--
作者：
Shuang Tang;M. Dresselhaus
开发了一个封闭模型来评估二维非抛物线载流子口袋的量子限制引起的带边位移。基于该模型，对沿不同晶轴生长的 BiSb 薄膜的不同载流子口袋的对称性和能带移动进行了评估。计算并分析了不同生长方向的BiSb薄膜体系的相图。
A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional non-parabolic carrier-pocket. Based on this model, the symmetries and the band-shifts of different carrier-pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.