Anisotropic spin structure along the easy axis of magnetization in epitaxially grown MnAs/GaAs(100) thin films
Anisotropic spin structure along the easy axis of magnetization in epitaxially grown MnAs/GaAs(100) thin films
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DOI：
10.1063/1.4861206
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发表时间：
2014-01
影响因子：
3.2
通讯作者：
J. H. Song;Y. Cui;J. Lee;J. Ketterson
中科院分区：
文献类型：
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作者：
J. H. Song;Y. Cui;J. Lee;J. Ketterson
采用分子束外延技术在GaAs（100）衬底上生长了MnAs薄膜，并对其磁性进行了研究。薄膜的晶体取向为B型。对薄膜磁化强度的测量显示其表面具有双重对称的磁各向异性，磁化的易磁化方向和难磁化方向分别沿着GaAs[1 <$10]（MnAs[1 <$1 $> 20]）和GaAs[110]（MnAs[11 <$02]）。我们发现断裂的单轴各向异性磁化沿着磁化的易磁化方向的磁化强度与磁场和磁化强度与温度的测量。我们认为MnAs层中这种特殊的钉扎铁磁性的起源是MnAs膜与GaAs（100）衬底界面处形成的超薄Mn层之间的自旋交换相互作用。
We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated their magnetic properties. The crystal orientation of the film was type-B. Measurements of the film's magnetization revealed two-fold symmetric magnetic anisotropy on its surface, with the easy and hard directions of magnetization along GaAs[1¯10](MnAs[1¯1¯20]) and GaAs[110](MnAs[11¯02]), respectively. We found breakage of the uniaxial anisotropy in magnetization along the easy direction of magnetization for both the magnetization versus magnetic field and magnetization versus temperature measurements. We suggest that the origin of this peculiar pinned ferromagnetism in the MnAs layer is the spin-exchange interaction between the MnAs film and the ultra-thin Mn layer formed at the interface of MnAs film and GaAs(100) substrate.