Berry phase and the phase of the Shubnikov-de Haas oscillations in three-dimensional topological insulators
Berry phase and the phase of the Shubnikov-de Haas oscillations in three-dimensional topological insulators
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DOI：
10.1103/physrevb.85.033301
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发表时间：
2012-01-04
影响因子：
3.7
通讯作者：
Sharlai, Yu. V.
中科院分区：
文献类型：
--
作者：
Mikitik, G. P.;Sharlai, Yu. V.
在半经典的方法，我们计算的Berry相位和塞曼耦合的电子矩与磁场的相位的Shubnikov-de哈斯振荡的三维拓扑绝缘体的Bi 2 X 3家庭（X代表Te或Se）的表面电子的贡献。我们还讨论了所获得的结果与发表的实验数据的Shubnikov-de哈斯振荡这个家庭的拓扑绝缘体的关系。
Within the semiclassical approach, we calculate contributions of the Berry phase and of the Zeeman coupling of an electron moment with the magnetic field to the phase of the Shubnikov-de Haas oscillations for the surface electrons in the Bi2X3 family of three-dimensional topological insulators (X stands for Te or Se). We also discuss a relation of the obtained results with published experimental data on the Shubnikov-de Haas oscillations for this family of topological insulators.