Synthesis and Structural characterization of ß-ketoiminate-stabilized gallium hydrides for chemical vapor deposition applications.
Synthesis and Structural characterization of ß-ketoiminate-stabilized gallium hydrides for chemical vapor deposition applications.
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用于化学气相沉积应用的α-酮亚胺稳定氢化镓的合成和结构表征。
DOI：
10.1002/chem.201402998
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Marchand P
中科院分区：
文献类型：
--
作者：
Marchand P
采用[（CH 2）n{N（H）C（Me）<$CHC（Me）<$O}2]（LnH 2，n=2，3和4）形式的双-β-酮亚胺配体形成一系列镓配合物[Ga（Ln）X]（X=Cl，Me，H），其通过NMR光谱、质谱和单晶X射线衍射分析表征。β-酮亚胺配体还被用于稳定稀有的氢化镓物质[Ga（Ln）H]（n=2（7）;n=3（8）），其首次被结构表征，证实了五配位单体物质的形成。通过热分析对这些化合物的稳定性进行了研究，结果表明在超过200 °C的温度下具有稳定性。通过热重分析和沉积研究研究了所有镓β-酮亚胺络合物作为通过化学气相沉积（CVD）沉积氧化镓薄膜的分子前体的功效，发现对于镓甲基络合物[L3{GaMe 2}2]（5）和氢化物[Ga（L3）H]（8）的最佳结果。所得膜（分别为F5和F8）在沉积时是非晶的，因此主要通过XPS、EDXA和SEM技术表征，其显示化学计量（F5）和缺氧（F8）Ga 2 O3薄膜的形成。
Bis‐β‐ketoimine ligands of the form [(CH2)n{N(H)C(Me)CHC(Me)O}2] (LnH2,n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(Ln)X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single‐crystal X‐ray diffraction analysis. The β‐ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(Ln)H] (n=2 (7);n=3 (8)), which have been structurally characterised for the first time, confirming the formation of five‐coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β‐ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L3{GaMe2}2] (5) and the hydride [Ga(L3)H] (8). The resulting films (F5andF8, respectively) were amorphous as‐deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric (F5) and oxygen‐deficient (F8) Ga2O3thin films.