GaN-on-Si Power Technology: Devices and Applications
GaN-on-Si Power Technology: Devices and Applications
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DOI：
10.1109/ted.2017.2657579
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发表时间：
2017-03-01
影响因子：
3.1
通讯作者：
Wu, Yifeng
中科院分区：
文献类型：
--
作者：
Chen, Kevin J.;Haeberlen, Oliver;Wu, Yifeng
在本文中，我们对最新设备技术和Gan-On-Si Power Electronics的应用开发进行了全面的审查和讨论。提出了几种用于实现正常运行的设备技术，这些技术对于电源开关应用非常需要。此外，还展示了可以从GAN功率设备的出色性能中受益匪浅的电路应用程序的示例。还介绍和分析了其他竞争性动力设备技术，例如SI SuperJunction-MOSFET和SIC MOSFET。关于成本，可靠性和易用性，讨论了Gan-On-Si电源设备商业化的关键问题。
In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison ith other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.