Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure
Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure
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DOI：
10.1063/1.1780595
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发表时间：
2004-08
影响因子：
4
通讯作者：
H. Kanno;A. Kenjo;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
H. Kanno;A. Kenjo;T. Sadoh;M. Miyao
研究了采用a-Ge/a-Si/Ni/SiO_2层状结构的金属诱导横向晶化(MILC)。与a-Si单层相比，a-Ge/a-Si层状结构中的MILC生长速度提高了3倍。结果表明，a-Ge层中的晶体形核促进了a-Si层中的键重排，从而提高了MILC速度，从而获得了大面积的多晶硅薄膜(∼10μm)。这将是在未来系统中显示的绝缘膜上实现大面积多晶硅面积的有力工具。
Modified metal-induced lateral crystallization (MILC) using a‐Ge∕a‐Si∕Ni∕SiO2 layered structures has been investigated. MILC growth velocity in the a‐Ge∕a‐Si layered structures was enhanced by three times compared with that in the a‐Si single layers. As a result, poly-Si films with large areas (∼10μm) were obtained in a short time annealing (<5h) at 550°C. It is speculated that crystal nucleation in the a‐Ge layers stimulated the bond rearrangement in the a‐Si layers, which enhanced the MILC velocity. This will be a powerful tool for realizing large poly-Si areas on insulating films for future system-in-displays.