The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface
The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface
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MnAs 薄膜在预吸附的 Si(001) 表面优先生长的证据
DOI：
10.1016/s0169-4332(98)00038-5
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Oshima
中科院分区：
文献类型：
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作者：
M. Nakamura;Masaki Shuzo;K. Ono;H. Fujioka;Masaaki Tanaka;T. Nishinaga;Y. Watanabe;M. Oshima
我们已经研究了使用光电子能谱的MnAs薄膜生长的初始阶段。使用具有Mn第一层和As第一层的两种类型的p型Si（001）衬底。结果表明，当先在Si上沉积1 ML的Mn时，在界面周围形成了锰硅化物（MnSi）和氧化硅。另一方面，当首先沉积As时，在界面处没有形成氧化硅。由于这种As钝化，首先沉积As的样品比先沉积Mn的样品具有更尖锐的界面和更好的膜质量。通过透射电子显微镜（TEM）观察了MnAs/Si体系中的界面合金。为了防止界面合金的形成，我们尝试在MnAs和Si之间插入GaAs，导致MnAs薄膜的生长，提高了薄膜质量。
We have investigated the initial stage of the MnAs film growth using photoelectron spectroscopy. Two types of p-type Si(001) substrates, with a Mn first layer and an As first layer were used. It is found that, a manganese silicide (MnSi) and silicon oxide are formed around the interface when 1 ML of Mn is deposited first on Si. On the other hand, there is no silicon oxide formed at the interface when As is deposited first. Because of this As-passivation, the sample on which As is deposited first, has the sharper interface and the better film quality than the Mn-first sample. The interfacial alloys were analyzed by cross-sectional transmission electron microscope (TEM) observation in the MnAs/Si system. To prevent the formation of interfacial alloys, we have tried to insert GaAs between MnAs and Si, resulting in the growth of MnAs film with improved film quality.