Oxidation of zirconium diboride–silicon carbide ceramics under an oxygen partial pressure of 200 Pa: Formation of zircon
Oxidation of zirconium diboride–silicon carbide ceramics under an oxygen partial pressure of 200 Pa: Formation of zircon
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DOI：
10.1016/j.corsci.2010.06.004
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发表时间：
2010-10
影响因子：
8.3
通讯作者：
D. Gao;Yue Zhang;Jingying Fu;Chunlai Xu;Yang Song;Xiaobin Shi
中科院分区：
文献类型：
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作者：
D. Gao;Yue Zhang;Jingying Fu;Chunlai Xu;Yang Song;Xiaobin Shi
研究了ZrB_2-20Vol.%碳化硅陶瓷在200Pa低氧分压下氧化过程中锆石的形成和演化。根据实验结果和热力学考虑，提出了锆英石的形成机理。而形成锆英石的主要原因是碳化硅的活性氧化。锆石的形成和演化可分为两个步骤：(1)从石英玻璃中成核；(2)晶体生长成棱柱状颗粒。此外，锆英石的出现显著提高了材料的抗氧化性能。
The formation and evolution of zircon during oxidation of ZrB2–20vol.% SiC ceramics under a low oxygen partial pressure of 200Pa is studied. The formation mechanism of zircon is proposed according to experimental results and thermodynamic consideration. And the main reason to the formation of zircon can be attributed to the active oxidation of SiC. Two steps can be divided for the formation and evolution of zircon: (1) nucleation from silica glass; and (2) crystal growth into prism like particles. Furthermore, the emergence of zircon significantly improves the oxidation resistance performance.