Single-Mask Fabrication of Sharp SiOx Nanocones
Single-Mask Fabrication of Sharp SiOx Nanocones
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DOI：
10.1109/tsm.2023.3336169
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发表时间：
2024-02
影响因子：
2.7
通讯作者：
Eric Herrmann;Xi Wang
中科院分区：
文献类型：
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作者：
Eric Herrmann;Xi Wang
硅和氧化硅纳米锥在器件表面的图案化引入了一些有趣的现象，如抗反射和超透射率。虽然硅纳米锥的形成已经得到了很好的证明，但目前制备氧化硅纳米锥的技术要么涉及复杂的制造过程，要么涉及到不确定的布局，或者涉及到较差的均匀性。在这里，我们介绍了一种单掩模干法刻蚀工艺，利用电子束光刻技术制备具有光滑侧壁和确定分布的尖锐的氧化硅纳米锥体。使用等离子体增强化学气相沉积沉积的氧化硅薄膜使用选择性>；88的薄氧化铝硬掩模进行刻蚀，使高纵横比纳米锥体具有平滑的侧壁和在目标衬底上的任意分布。我们进一步介绍了一种新的多步干法刻蚀技术，以获得尖端直径为~10 nm的超锐利非晶二氧化硅纳米锥。这项工作中提出的工艺可以应用于在任意衬底上制备非晶态纳米锥阵列或作为纳米级的探针。
The patterning of silicon and silicon oxide nanocones onto the surfaces of devices introduces interesting phenomena such as anti-reflection and super-transmissivity. While silicon nanocone formation is well-documented, current techniques to fabricate silicon oxide nanocones either involve complex fabrication procedures, non-deterministic placement, or poor uniformity. Here, we introduce a single-mask dry etching procedure for the fabrication of sharp silicon oxide nanocones with smooth sidewalls and deterministic distribution using electron beam lithography. Silicon oxide films deposited using plasma-enhanced chemical vapor deposition are etched using a thin alumina hard mask of selectivity > 88, enabling high aspect ratio nanocones with smooth sidewalls and arbitrary distribution across the target substrate. We further introduce a novel multi-step dry etching technique to achieve ultra-sharp amorphous silicon oxide nanocones with tip diameters of ~10 nm. The processes presented in this work may have applications in the fabrication of amorphous nanocone arrays onto arbitrary substrates or as nanoscale probes.