Advances in the Surface Passivation of Silicon Solar Cells
Advances in the Surface Passivation of Silicon Solar Cells
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DOI：
10.1016/j.egypro.2012.02.004
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Jan Schmidt;F. Werner;Boris Veith;D. Zielke;S. Steingrube;P. Altermatt;S. Gatz;T. Dullweber
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文献类型：
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作者：
Jan Schmidt;F. Werner;Boris Veith;D. Zielke;S. Steingrube;P. Altermatt;S. Gatz;T. Dullweber
将晶体硅上氧化铝 (Al2O3) 的表面钝化性能与传统氮化硅 (SiNx) 钝化体系进行了比较。结果表明，当应用于p型硅太阳能电池的背面以及n型硅太阳能电池的p+发射极时，Al2O3比SiNx具有根本优势。特别强调将Al2O3 转移到工业太阳能电池生产中。我们比较了适合大规模生产的不同 Al2O3 沉积技术，例如超快空间原子层沉积、在线等离子体增强化学气相沉积和反应溅射。最后，我们回顾了Al2O3钝化电池的最新成果，并对Al2O3在硅太阳能电池生产中的未来前景进行了简要展望。
The surface passivation properties of aluminium oxide (Al2O3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiNx). It is shown that Al2O3 has fundamental advantages over SiNx when applied to the rear of p-type silicon solar cells as well as to the p+ emitter of n-type silicon solar cells. Special emphasis is paid to the transfer of Al2O3 into industrial solar cell production. We compare different Al2O3 deposition techniques suitable for mass production such as ultrafast spatial atomic layer deposition, inline plasma-enhanced chemical vapour deposition and reactive sputtering. Finally, we review the most recent cell results with Al2O3 passivation and give a brief outlook on the future prospects of Al2O3 in silicon solar cell production.