Charging Effects on SEM/SIM Contrast of Metal/Insulator System in Various Metallic Coating Conditions
Charging Effects on SEM/SIM Contrast of Metal/Insulator System in Various Metallic Coating Conditions
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DOI：
10.2320/matertrans.m2010034
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发表时间：
2010-06-01
影响因子：
1.2
通讯作者：
Shindo, Daisuke
中科院分区：
文献类型：
--
作者：
Kim, Ki Hyun;Akase, Zentaro;Shindo, Daisuke
进行了扫描电子显微镜（SEM）和扫描离子显微镜（SIM）观察，以研究在电子和镓离子束照射下导电和非导电样品图像的荷电效应及相关对比度变化。通过改变镀膜条件研究了样品中的对比度变化。发现导电样品中的对比度基本上是由原子序数差异引起的，并且导电样品中的荷电效应通常小于非导电样品。另一方面，非导电样品的SEM对比度根据镀膜条件有很大差异。发现这些对比度变化是由样品表面积累的负电荷引起的。当镀膜条件不足时，非导电样品的SIM对比度会变暗。发现对比度变化是由样品表面正电荷的积累引起的。[doi 10.2320/matertrans.M2010034]
Scanning electron microscope (SEM) and scanning ion microscope (SIM) observations were performed to investigate the charging effect and the related contrast variation for images of conductive and non-conductive specimens under electron and Ga+ ion beam irradiations The contrast variation in the specimens was investigated by changing the coating conditions It was found that the contrast in conductive specimens was basically caused by differences in atomic number and that the charging effect in conductive specimens is generally smaller than that in non-conductive specimens On the other hand, the SEM contrast of non-conductive specimens varied widely, depending on the coating conditions These contrast variations were found to be caused by negative charges accumulated on the surface of the specimens The SIM contrast of non-conductive specimens changed to dark when the coating condition was insufficient The contrast variations were found to he caused by the accumulation of positive charges on the surface of specimens [doi 10.2320/matertrans.M2010034]