Preparation of Nanocrystalline Cu Films by Brush-Plating
Preparation of Nanocrystalline Cu Films by Brush-Plating
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DOI：
10.1080/10584587.2012.687266
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发表时间：
2012-01
影响因子：
0.7
通讯作者：
J. Mu;Lei Zhao;Shicheng Sun;Zhonghao Jiang;J. Lian
中科院分区：
文献类型：
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作者：
J. Mu;Lei Zhao;Shicheng Sun;Zhonghao Jiang;J. Lian
采用电刷镀法制备了纳米晶铜薄膜。 X 衍射分析和透射电子显微镜的微观结构表征表明，随着电流密度和镀液中铜离子浓度的降低，纳米晶铜薄膜的平均晶粒尺寸从 24.4 nm 增加到 150.5 nm。在较低的电流密度和铜离子浓度下观察到许多生长孪晶。结果表明，适当控制电流密度和镀液中铜离子浓度，可以通过刷镀技术制备具有更宽晶粒尺寸范围和/或高生长孪晶含量的纳米晶铜薄膜。
Nanocrystalline Cu films were prepared by electric brush-plating. Microstructure characterization by X-diffraction analysis and transmission electron microscope reveals that the average grain size of the nanocrystalline Cu films increases from 24.4 to 150.5 nm with decreases in current density and concentration of Cu ions in bath. A number of growth twins are observed at lower current density and concentration of Cu ions. The results reveal that the nanocrystalline Cu films with wider ranges of grain size and/or high content of growth twins can be prepared by brush-plating technique with suitable controls of current density and concentration of Cu ions in bath.