Multi-layer Thick Gas Electron Multiplier (M-THGEM): a new MPDG structure for high-gain operation at low-pressure
Multi-layer Thick Gas Electron Multiplier (M-THGEM): a new MPDG structure for high-gain operation at low-pressure
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发表时间：
2016-06
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通讯作者：
M. Cortesi;S. Rost;W. Mittig;Y. A. Limonge;D. Bazin;J. Yurkon;A. Stolz
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作者：
M. Cortesi;S. Rost;W. Mittig;Y. A. Limonge;D. Bazin;J. Yurkon;A. Stolz
介绍了多层厚气体电子倍增器的工作原理和性能。M-THGEM是采用多层印刷电路板技术生产的一种新型空穴型气体电子倍增器；它由多个绝缘衬底片（例如FR-4）的密集穿孔组件组成，夹在薄金属电极层之间。在电极间施加合适的电位差所产生的强偶极子场的作用下，电子雪崩过程沿着M-THGEM空穴内的连续倍增阶段发生。目前的工作重点是研究两种不同的几何形状：两层M-THGEM（作为单级或双级检测器）和单个三层M-THGEM元素，在各种低压he基气体混合物中进行测试。M-THGEM孔洞内雪崩体积的固有强大限制提供了有效抑制光子诱导的二次效应，从而在宽压力范围内实现高增益操作，即使在纯惰性气体中也是如此。讨论了在不同辐照条件下的工作原理、主要性能（最大可达增益、长期稳定性、能量分辨率等）、性能和潜在应用。
The operating principle and performances of the Multi-layer Thick Gaseous Electron Multiplier (M-THGEM) is presented. The M-THGEM is a novel hole-type gaseous electron multiplier produced by multi-layer printed circuit board technology; it consists of a densely perforated assembly of multiple insulating substrate sheets (e.g., FR-4), sandwiched between thin metallic-electrode layers. The electron avalanche processes occur along the successive multiplication stages within the M-THGEM holes, under the action of strong dipole fields resulting from the application of suitable potential differences between the electrodes. The present work focuses on investigation of two different geometries: a two-layer M-THGEM (either as single or double-cascade detector) and a single three-layer M-THGEM element, tested in various low-pressure He-based gas mixtures. The intrinsically robust confinement of the avalanche volume within the M-THGEM holes provides an efficient suppression of the photon-induced secondary effects, resulting in a high-gain operation over a broad pressure range, even in pure noble gas. The operational principle, main properties (maximum achievable gain, long-term stability, energy resolution, etc.) under different irradiation conditions, as well as capabilities and potential applications are discussed.