Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes
Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes
复制标题
DOI：
10.1016/s0022-0248(01)01469-5
复制
发表时间：
2001-10-01
影响因子：
1.8
通讯作者：
Dunstan, DJ
中科院分区：
文献类型：
--
作者：
Kuball, M;Hayes, JM;Dunstan, DJ
我们报道了单晶块体AIN的拉曼分析。研究了AIN声子模随温度和静水压力的变化。通过AIN拉曼线宽研究了声子衰变通道。确定了描述AIN声子模低压行为的模式Gruneisen参数，并将其用于估算琥珀变色AIN衬底中的流体静力。(C)2001 Elsevier Science B.V.保留所有权利。
We report on the Raman analysis of single-crystalline bulk AIN. AIN phonon modes were investigated as a function of temperature and hydrostatic pressure. Phonon decay channels were studied via the AIN Raman linewidth. Mode Gruneisen parameters describing the low-pressure behavior of the AIN phonon modes were determined and used to estimate hydrostatic stress in amber discolored AIN substrates. (C) 2001 Elsevier Science B.V. All rights reserved.