Low temperature deposition of nanocrystalline silicon carbide thin films
Low temperature deposition of nanocrystalline silicon carbide thin films
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DOI：
10.1063/1.126350
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发表时间：
2000-04
影响因子：
4
通讯作者：
S. Kerdilès;A. Berthelot;F. Gourbilleau;R. Rizk
中科院分区：
文献类型：
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作者：
S. Kerdilès;A. Berthelot;F. Gourbilleau;R. Rizk
碳化硅薄膜是通过反应磁控溅射在纯氢等离子体中沉积的，衬底温度 Ts 范围为 100 至 600 °C。红外 (IR) 吸收光谱和透射电子显微镜观察表明，结晶温度低至 300 °C。结晶分数随着 Ts 的增加而增加，并且在 Ts=600 °C 时达到约 60% 的值。折射率 n 和室温暗电导率 σd(RT) 都表现出与层的结构演化非常一致的行为。因此，当 Ts 从 100 °C 升至 600 °C 时，n 从 1.9 增加至 2.4，并且 σd(RT) 提高了六个数量级。
Silicon carbide thin films have been deposited by reactive magnetron sputtering in a pure hydrogen plasma at substrate temperatures, Ts, ranging between 100 and 600 °C. The infrared (IR) absorption spectra and the transmission electron microscopy observations reveal an onset of crystallization at Ts as low as 300 °C. The crystalline fraction increases with Ts and reaches a value of about 60% for Ts=600 °C. Both refractive index n and room temperature dark conductivity σd(RT) show quite consistent behaviors with the structural evolution of the layers. Thus n increases from 1.9 to 2.4 and σd(RT) improves by six orders of magnitude when Ts is raised from 100 to 600 °C.