Ferromagnetic Iron Silicide Thin Films Prepared by Pulsed-Laser Deposition
Ferromagnetic Iron Silicide Thin Films Prepared by Pulsed-Laser Deposition
复制标题
脉冲激光沉积制备铁磁硅化铁薄膜
DOI：
10.1143/jjap.42.l849
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Nagayama
中科院分区：
文献类型：
--
作者：
T. Yoshitake;D. Nakagauchi;K. Nagayama
Fe-Si体系既有β-FeSi2、非晶FeSi2和FeSi等半导体相，也有Fe3Si的铁磁相。为了制备由半导体和铁磁金属组成的Fe-Si系异质结构薄膜，铁磁Fe3Si薄膜必须在较低的衬底温度下生长。在这项工作中，我们研究了脉冲激光沉积Fe3Si薄膜的生长，发现在衬底温度为300℃和室温下分别生长出单相Fe3Si薄膜和铁磁性非晶薄膜。
The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.