High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
复制标题
4H-SiC 外延层中螺纹刃位错的高分辨率形貌分析
DOI：
10.4028/www.scientific.net/msf.600-603.305
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Dudley
中科院分区：
文献类型：
--
作者：
I. Kamata;M. Nagano;H. Tsuchida;Yi Chen;M. Dudley
使用高分辨率同步加速器形貌研究 4H-SiC 外延层中的螺纹刃位错 (TED)。通过比较计算机模拟图像和观察到的晶界形貌图像，确认了六种类型的 TED 图像对应于伯格斯矢量方向。使用映射方法，在 2 英寸晶圆的四分之一部分中检查六种类型 TED 的广泛空间分布。
Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.