Role of electron tunneling in spin filtering at ferromagnet/semiconductor interfaces
Role of electron tunneling in spin filtering at ferromagnet/semiconductor interfaces
复制标题
电子隧道效应在铁磁体/半导体界面自旋过滤中的作用
DOI：
10.1103/physrevb.68.073303
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发表时间：
2003
影响因子：
3.7
通讯作者：
J. Bland
中科院分区：
文献类型：
--
作者：
S. Andresen;S. J. Steinmuller;A. Ionescu;G. Wastlbauer;C. M. Guertler;J. Bland
Spin-dependent electron transport between a semiconductor and a ferromagnetic metal has been studied by polarized photoexcitation. Using a band gap engineered $\mathrm{A}\mathrm{u}/\mathrm{N}\mathrm{i}\mathrm{F}\mathrm{e}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/n\ensuremath{-}\mathrm{GaAs}$ structure we are able to precisely control the bias and temperature range under which tunneling processes occur. We find that electron spin filtering is only observed when tunneling processes are switched on, whereas when tunneling is suppressed, only magneto-optical dichroism effects contribute to the polarization dependent photocurrent.
Spin-dependent electron transport between a semiconductor and a ferromagnetic metal has been studied by polarized photoexcitation. Using a band gap engineered $\mathrm{A}\mathrm{u}/\mathrm{N}\mathrm{i}\mathrm{F}\mathrm{e}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/n\ensuremath{-}\mathrm{GaAs}$ structure we are able to precisely control the bias and temperature range under which tunneling processes occur. We find that electron spin filtering is only observed when tunneling processes are switched on, whereas when tunneling is suppressed, only magneto-optical dichroism effects contribute to the polarization dependent photocurrent.