Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet
Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet
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DOI：
10.1002/adma.201506151
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发表时间：
2016-08-17
影响因子：
29.4
通讯作者：
Minari, Takeo
中科院分区：
文献类型：
--
作者：
Liu, Xuying;Kanehara, Masayuki;Minari, Takeo
提出了一种利用平行真空紫外自发图像化技术，用于制作分辨率为1 μ m的大型复杂电子电路。所制备的有机薄膜晶体管在通道长度为1 μ m和5 μ m的低工作电压器件中，分别具有1.5 k ω cm的低接触电阻和1.5 cm(2) v - 1s（-1）的高迁移率。
A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 mu m resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 k Omega cm, and high mobilities of 0.3 and 1.5 cm(2) V-1 s(-1) in low-operating-voltage devices with channel lengths of 1 and 5 mu m, respectively.