Electrical transport properties in group-V elemental ultrathin 2D layers
Electrical transport properties in group-V elemental ultrathin 2D layers
复制标题
DOI：
10.1038/s41699-020-0139-x
复制
发表时间：
2020-03
影响因子：
9.7
通讯作者：
Zehan Wu;J. Hao
中科院分区：
文献类型：
--
作者：
Zehan Wu;J. Hao
自二维(2D)层状磷的研究取得突破性进展以来，V族元素超薄2D层因其独特而有前景的电输运特性而备受关注，包括具有直接和理想的能带结构、优异的载流子迁移率、外加应变、电场和磁场下的可控和可调谐特性、面内和面外方向的高度各向异性现象、拓扑透射态和负泊松比等半导体特性。因此，对这一类2D材料的研究迅速展开，同时开启了纳米科学的巨大潜力和新的机遇，并在光电子学、磁电子学、热电子学、铁电学、拓扑自旋电子学等方面得到了应用。本文从方兴未艾的研究领域对V族元素超薄2D层的电输运研究的最新进展进行了系统的总结和提炼，并提出了全面的讨论和建议，以期拓宽和深化对2D层家族的认识。最后，我们为未来在这一前景广阔的领域的探索提供了关键的动力和挑战。
After the breakthrough of the study on the two-dimensional (2D) layered phosphorus, group-V elemental ultrathin 2D layers have captured considerable attentions in recent years on account of their unique and promising electrical transport properties, including semiconductor features with direct and desirable energy band structures, outstanding carrier mobilities, controllable and tunable characteristics under applied strain, electric and magnetic fields, highly anisotropic phenomena along both in-plane and out-plane directions, topological transmission states, and negative Poisson’s ratio. Accordingly, a number of investigations on this family of 2D materials have been conducting rapidly, while initiating great potential and new opportunities on the nanoscale science and applications in optoelectronic, magneto-electronics, thermo-electronic, ferroelectric, topological spintronics, and so on. Herein, a specific review is provided with systematical summarizations and refinements on the recent advances of the electrical transport in group-V elemental ultrathin 2D layers from the blossoming field of research, while comprehensive discussion and some recommendations are put forward, with an expectation of broadening and deepening understanding of the family of 2D layers. Lastly, we provide critical motivation and challenge for future explorations in this promising territory.