Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
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DOI：
10.1103/revmodphys.73.783
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发表时间：
2001-07-01
影响因子：
44.1
通讯作者：
Kroemer, H
中科院分区：
文献类型：
--
作者：
Kroemer, H
异质结构，正如我在这里使用的这个词，可以定义为由两种或更多种不同的半导体构建的异质半导体结构，以这种方式，不同材料之间的过渡区或界面在任何器件动作中都起着至关重要的作用。通常，可以说界面就是器件，参与的半导体都涉及元素周期表（表I）中心部分的元素。中间是硅，现代电子学的支柱。Si下面是锗。虽然Ge本身很少使用，但具有成分依赖性位置的Ge-Si合金在当今的异质结构技术中发挥着越来越重要的作用。事实上，从历史上看，这是第一个提出的异质结构器件系统，尽管它也是实现实际成熟所需时间最长的系统，主要是因为Si和Ge的晶格常数之间存在4%的失配。
Heterostructures, as I use the word here, may be defined as heterogeneous semiconductor structures built from two or more different semiconductors, in such a way that the transition region or interface between the different materials plays an essential role in any device action. Often, it may be said that the interface is the device.The participating semiconductors all involve elements from the central portion of the periodic table of the elements (Table I). In the center is silicon, the backbone of modern electronics. Below Si is germanium. Although Ge is rarely used by itself, Ge-Si alloys with a composition-dependent position play an increasingly important role in today’s heterostructure technology. In fact, historically this was the first heterostructure device system proposed, although it was also the system that took longest to bring to practical maturity, largely because of the 4% mismatch between the lattice constants of Si and Ge.