High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
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DOI：
10.1063/1.1756202
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发表时间：
2004-06-07
影响因子：
4
通讯作者：
Khan, MA
中科院分区：
文献类型：
--
作者：
Adivarahan, V;Wu, S;Khan, MA
报道了蓝宝石衬底上的269 nm深紫外光发光二极管(LED)。在材料质量、器件设计和接触工艺顺序方面，在200 mA的泵浦脉冲电流和10 mA的直流泵浦电流下，器件的外量子效率分别高达0.4%和0.32%。对于一个由两个LED串联而成的模块，测得了创纪录的0.85 mW(40 MA)的连续波功率和0.16%的壁插效率(10 MA DC)。(C)2004年美国物理研究所。
We report on 269 nm emission deep ultraviolet light-emitting diodes (LEDs) over sapphire. The material quality, device design, and contact processing sequence yielded devices with external quantum efficiencies as high as 0.4% for a pumped pulse current of 200 mA and 0.32% for a dc pump current of 10 mA. For a module of two LEDs connected in series, a record continuous-wave power of 0.85 mW (at 40 mA) and a wall plug efficiency of 0.16% (at 10 mA dc) were measured. (C) 2004 American Institute of Physics.