High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design
High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design
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DOI：
10.1109/tpel.2012.2235859
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发表时间：
2013-09
影响因子：
6.7
通讯作者：
Shu Ji;D. Reusch;F. Lee
中科院分区：
文献类型：
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作者：
Shu Ji;D. Reusch;F. Lee
传统的电源技术已经不能满足未来电源的高输出电流、小尺寸、高效率的需求。在开关性能、封装寄生效应、布局寄生效应和热管理方面存在限制，必须解决这些限制，以推动更高的频率和更高的功率密度。为了解决这些限制，氮化镓（GaN）晶体管，3-D集成技术，低剖面磁性基板，陶瓷基板具有高导热性的利用被认为是。本文讨论了GaN晶体管的特性，包括增强型和耗尽型GaN晶体管之间的基本区别、栅极驱动和死区损耗、寄生效应对高频GaN负载点（POL）性能的影响、将有源层与低剖面低温共烧陶瓷磁性衬底集成的三维共封装技术以及使用先进衬底的高密度模块的热设计。最终的演示产品是三个12-1.2-V转换POL模块：一个采用增强型GaN晶体管的单相20 A 900 W/in 3 2-MHz转换器、一个单相10 A 800 W/in 3 5-MHz转换器和一个采用耗尽型GaN晶体管的两相20 A 1100 W/in 3 5-MHz转换器。与最先进的工业产品和研究相比，这些转换器提供无与伦比的功率密度。
The demand for the future power supplies that can achieve higher output currents, smaller sizes, and higher efficiencies cannot be satisfied with the conventional technologies. There are limitations in the switch performance, packaging parasitics, layout parasitics, and thermal management that must be addressed to push for higher frequencies and improved power density. To address these limitations, the utilization of Gallium-Nitride (GaN) transistors, 3-D integrated technique, low-profile magnetic substrates, and ceramic substrates with high thermal conductivity are considered. This paper discusses the characteristics of GaN transistors, including the fundamental differences between the enhancement mode and the depletion mode GaN transistors, gate driving, and the deadtime loss, the effect of parasitics on the performance of high-frequency GaN point-of-load (POLs), the 3-D copackage technique to integrate the active layer with low profile low temperature cofired ceramic magnetic substrate, and the thermal design of a high -density module using advanced substrates. The final demonstrators are three 12-1.2-V conversion POL modules: a single-phase 20 A 900 W/in3 2-MHz converter using enhancement mode GaN transistors, a single-phase10-A 800 W/in3 5-MHz converter, and a two-phase 20-A 1100 W/in3 5-MHz converter using the depletion mode GaN transistors. These converters offer unmatched power density compared to state-of-the-art industry products and research.