Residual resistivities of dilute Cu-Ir, Au-Ta and Au-Hf alloys
Residual resistivities of dilute Cu-Ir, Au-Ta and Au-Hf alloys
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稀 Cu-Ir、Au-Ta 和 Au-Hf 合金的残余电阻率
DOI：
10.1088/0305-4608/5/8/002
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发表时间：
1975
期刊：
影响因子：
--
通讯作者：
K. Kume
中科院分区：
文献类型：
--
作者：
T. Toyoda;K. Kume
在1.5 ~ 4.2K温度范围内测量了Cu-Ir、Au-Ta和Au-Hf稀合金的电阻率。结果发现，结晶度没有依赖于温度和每原子百分比浓度的残余结晶度的值与4d稀合金同意。
Resistivities of Cu-Ir, Au-Ta and Au-Hf dilute alloys were measured between 1.5K and 4.2K. It was found that the resistivities had no dependence on temperature and that the values obtained for residual resistivities per atomic percentage concentration agreed with those of 4d dilute alloys.