Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
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DOI：
10.1143/jjap.42.2426
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发表时间：
2003-04
影响因子：
1.5
通讯作者：
M. Saitoh;H. Majima;T. Hiramoto
中科院分区：
文献类型：
--
作者：
M. Saitoh;H. Majima;T. Hiramoto
我们研究了室温工作的硅单电子晶体管和单孔晶体管中形成的隧道势垒结构。这些器件采用超窄沟道金属氧化物半导体场效应晶体管 (MOSFET) 形式，具有 n+ 和 p+ 源极/漏极触点。从同一物理沟道剖面中电子和空穴的库仑封锁特性可以发现，价带中比导带中形成了更高的隧道势垒和更小的无法物理定义的有效点（势阱）。建议为了提高单电荷器件的工作温度，单空穴系统优于单电子系统。
We investigate the tunneling barrier structures formed in the room-temperature-operating silicon single-electron transistors and single-hole transistors. The devices are in the form of ultranarrow-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with both n+ and p+ source/drain contacts. From the Coulomb blockade characteristics of both electrons and holes in the same physical channel profile, it is found that higher tunneling barriers and smaller effective dots (potential wells) which cannot be physically defined are formed in the valence band than in the conduction band. It is suggested that, in order to improve the operation temperature of single charge devices, a single-hole system is preferable to a single-electron system.