Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency
Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency
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DOI：
10.1063/1.2403907
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发表时间：
2006-12
影响因子：
4
通讯作者：
M. Rowe;E. Gansen;M. Greene;R. Hadfield;T. Harvey;M. Su;S. Nam;R. Mirin;D. Rosenberg
中科院分区：
文献类型：
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作者：
M. Rowe;E. Gansen;M. Greene;R. Hadfield;T. Harvey;M. Su;S. Nam;R. Mirin;D. Rosenberg
我们研究了量子点、光选通、场效应管作为光子探测器的工作原理。该探测器具有时间门控、单次激发、单光子灵敏度、线性响应和4K时高达(68±18)%的内量子效率。考虑到探测器系统的噪声，他们发现可以选择一个特定的鉴别器电平，这样设备的内部量子效率为(53±11)%，暗计数为每一次0.003次。
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.