Artificial pinning centres in YBCO thin films induced by substrate decoration with gas-phase-prepared Y2O3 nanoparticles
Artificial pinning centres in YBCO thin films induced by substrate decoration with gas-phase-prepared Y2O3 nanoparticles
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DOI：
10.1088/0953-2048/20/9/s19
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发表时间：
2007-08
影响因子：
3.6
通讯作者：
M. Sparing;E. Backen;T. Freudenberg;R. Hühne;B. Rellinghaus;L. Schultz;B. Holzapfel
中科院分区：
文献类型：
--
作者：
M. Sparing;E. Backen;T. Freudenberg;R. Hühne;B. Rellinghaus;L. Schultz;B. Holzapfel
采用惰性气相凝聚法制备了Y2O3纳米粒子，并在YBa2Cu3O7−δ薄膜中引入了人工钉扎中心。颗粒面密度在12 0~4 2 0 0µm−2之间变化，平均颗粒直径约为9 nm。采用离轴脉冲激光沉积的方法在TiO2端的SrTiO3面密度高达1654um−2的单晶衬底上沉积了Y2O3颗粒，并在其表面覆盖了YBa2Cu3O7−δ。PLD过程中，室温沉积粒子的面密度不受衬底加热的影响，但其在衬底上的高度有所降低。当颗粒密度大于1588µm时，−_2对JC的影响，表明气相Y2O_3纳米颗粒修饰衬底影响了−δ薄膜中人工钉扎中心的形成，可用于进一步研究颗粒尺寸和面密度对−δ中缺陷形成的影响。
Y2O3 nanoparticles prepared by an inert gas phase condensation process were used to introduce artificial pinning centres in YBa2Cu3O7−δ thin films. The areal density of the particles was varied between 120 and 4200 particles µm−2 without changing the mean particle diameter of approximately 9 nm. Y2O3 particles were deposited on TiO2 terminated SrTiO3 (100) single-crystal substrates with areal densities up to 1654 particles µm−2 and subsequently covered with YBa2Cu3O7−δ by off-axis pulsed laser deposition (PLD). The areal density of the room temperature deposited particles is not changed by the substrate heating during PLD although their height on the substrate decreases. An influence on Jc is demonstrated for particle densities above 1588 particles µm−2, indicating that the substrate decoration with Y2O3 nanoparticles from the gas phase affects the formation of artificial pinning centres in the YBa2Cu3O7−δ films and can be applied to further study of the effect of particle size and areal density on defect formation in YBa2Cu3O7−δ.